PART |
Description |
Maker |
HM62W8512B HM62W8512BLFP-5 HM62W8512BLFP-5SL HM62W |
4 M SRAM (512-kword x 8-bit) Octal Buffer/Driver With Open-Collector Outputs 20-PDIP -40 to 85 4 M SRAM (512-kword x 8-bit) 四米的SRAM12 - KWord的8位)
|
HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
|
HN58X24256FPI HN58X24128I HN58X24256TI HN58X24128T |
Two-wire serial interface, 128k EEPROM (16-kword x 8-bit), 256k EEPROM (32-kword x 8-bit) 两线串行接口28K的EEPROM中(16 KWord的8位)56k的EEPROM2 KWord的8位)
|
Hitachi,Ltd.
|
UPD444016LG5-A10-7JF UPD444016LG5-A12-7JF UPD44401 |
256K X 16 STANDARD SRAM, 8 ns, PDSO44 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT 4分位CMOS快速静态存储器256K字由16
|
NEC, Corp. NEC Corp. NEC[NEC]
|
R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (256-kword X 16-bit) From old datasheet system
|
http:// RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
|
HN58C257AT-85 HN58C256AT-85 HN58C256AP-10 HN58C256 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) 256k的EEPROM2 KWord的8位)就绪/忙和RES功能(HN58C257A
|
Hitachi Semiconductor Hitachi,Ltd.
|
HM628511CJPI12 HM628511HCJPI-12 HM628511HCI |
Memory>Fast SRAM>Asynchronous SRAM Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit) Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
RENESAS[Renesas Electronics Corporation]
|
R1RW0408DGE-2PI R1RW0408DI |
Memory>Fast SRAM>Asynchronous SRAM Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit) Wide Temperature Range Version 4M High Speed SRAM (512-kword 隆驴 8-bit) Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
Renesas Electronics Corporation
|
HN58X2408FPIAGE HN58X2416FPIAGE HN58X2432FPIAGE HN |
Two-wire serial interface 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM (8-kword × 8-bit)
|
Renesas Electronics Corporation
|
HY62SF16404D HY62SF16404D-DF85I |
256K X 16 STANDARD SRAM, 85 ns, PBGA48 High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX SEMICONDUCTOR INC
|
BS62LV2006HCG55 BS62LV2006HCG70 BS62LV2006HI70 BS6 |
Very Low Power CMOS SRAM 256K X 8 bit 非常低功耗CMOS SRAM 256K × 8
|
BRILLIANCE SEMICONDUCTOR, INC.
|